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| TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8004 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 200 V) Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 200 200 20 1.3 5.2 1.5 W 0.6 1.05 1.3 0.15 150 -55~150 mJ A mJ C C 8 7 6 5 Unit V V V A Pulse (Note 1) JEDEC JEITA TOSHIBA 2-3R1B Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note3) Avalanche current Repetitive avalanche energy (Note2a, Note 4) Channel temperature Storage temperature range Weight: 0.035 g (typ.) Circuit Configuration Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 4 1 2004-07-06 TPCS8004 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit C/W C/W Marking (Note 5) Part No. (or abbreviation code) S8004 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) Note 3: VDD = 50 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 1.3 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPCS8004 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton ID = 0.6 A VOUT RL = 167 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.6 A VDS = 10 V, ID = 0.6 A Min 200 1.5 0.9 VDD 160 V, VGS = 10 V, - ID = 1.3 A Typ. 0.56 1.8 380 40 140 4.5 12 23 54 12 8 4 Max 10 100 3.5 0.8 ns nC nC nC Unit A A V V S pF pF pF 10 V 0V VDD 100 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current (pulse) Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDRP VDSF trr Qrr Test Condition IDR = 1.3 A, VGS = 0 V IDR = 1.3 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 89 230 Max 5.2 -2.0 Unit A V ns nC 3 2004-07-06 TPCS8004 ID - VDS 5 10 4.8 4 8 6 4.6 4.4 3 4.2 2 Common source Ta = 25C Pulse test 5 10 8 4 6 ID - VDS 4.8 Common source Ta = 25C Pulse test 4.6 4.4 3 4.2 2 Drain current ID (A) 4 3.8 Drain current ID (A) 4 3.8 VGS = 3.6 V 1 VGS = 3.6 V 1 0 0 10 20 30 40 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 5 Common source VDS = 10 V Pulse test 3.0 VDS - VGS Common source Ta = 25C Pulse test 4 Drain current ID (A) VDS (V) Drain-source voltage 2.5 2.0 3 1.5 ID = 2.6 A 2 25C 1 1.0 1.3 0.5 0.6 0.32 4 8 12 16 20 Ta = 100C -55C 0 0 1 2 3 4 5 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 7 5 Common source VDS = 10 V Pulse test Ta = -55C RDS (ON) - ID 5 Common source Ta = 25C Pulse test (S) 3 () Forward transfer admittance Yfs 1 Drain-source on resistance RDS (ON) 100C 25C 3 1 VGS = 10 V 0.5 0.3 15 V 0.5 0.3 0.1 0.1 0.05 0.05 0.1 0.3 0.5 1 3 5 0.05 0.05 0.1 0.3 0.5 1 3 5 Drain current ID (A) Drain current ID (A) 4 2004-07-06 TPCS8004 RDS (ON) - Ta () 1.2 Common source 1.0 Pulse test 0.65 A ID = 0.32 A 1.3 A 5 10 Common source Ta = 25C Pulse test IDR - VDS Drain-source ON resistance RDS (ON) (A) Drain reverse current IDR 3 0.8 0 0.4 VGS = 10 V 0.2 1 0.5 0.3 VGS = 10 V 5V 0 -80 -40 0 40 80 120 160 0.1 -0.03 -0.05 3V -0.1 -0.3 -0.5 0, -1 V -1 -3 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss 5 Common source VDS = 10 V ID = 1 mA Pulse test Vth - Ta Vth (V) Gate threshold voltage 4 (pF) 100 Coss 3 Capacitance C 2 10 Crss 1 1 0.1 Common source Ta = 25C f = 1MHz VGS = 0 V 1 10 100 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2.0 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s 160 Dynamic input/output characteristics 16 40 120 80 VDD = 160 V 80 VGS Common source 40 ID = 1.3 A Ta = 25 C 4 8 12 Drain power dissipation PD (W) (V) 1.6 (1) Drain-source voltage 0.8 (2) 0.4 0 0 40 80 120 160 200 0 0 4 8 12 16 0 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2004-07-06 Gate-source voltage 1.2 VGS (V) VDS VDS TPCS8004 rth - tw 500 rth (C/W) 300 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (2) 100 50 30 (1) Normalized transient thermal impedance 10 5 3 1 0.5 0.3 Single pulse 0.1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (S) Safe operating area 10 5 3 1 ID max (pulse) * 1.2 EAS - Tch Avalanche energy EAS (mJ) 1 ms * 1.0 Drain current ID (A) 0.5 0.3 0.1 0.05 0.03 0.01 0.005 * Single pulse Ta = 25C 0.003 Curves must be derated linearly with increase in temperature. 0.001 0.1 0.3 1 3 10 0.8 10 ms * 0.6 0.4 0.2 VDSS max 30 100 300 1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit Wave form Tch = 25C (Initial) B VDSS 1 2 Peak IAR = 1.3 A, RG = 25 E AS = 2 L I B VDSS - VDD VDD = 50 V, L = 1 mH 6 2004-07-06 TPCS8004 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2004-07-06 |
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